CoolGaN™ e-mode HEMT ( Booth No. :S0914 )

Infineon Technologies Taiwan Co., Ltd.
台灣英飛凌科技股份有限公司

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Winning Reason

  • This product is an enhanced transistor that has a unique “Normal OFF” property which allows for a longer product life-span.
  • This product can produce higher system efficiency, greatly increase power density and higher operating frequency. 
  • This product benefits from GaN technology, including high reliability and longer life-span. Also, since the power density has been greatly increased, the system costs have also been largely reduced.

Product Feature

Infineon CoolGaN™ e-mode HEMT reaches 140 W/in3 for 3kW LLC with >98% efficiency, significantly improving power density to almost 3 fold enabling more compact design and efficiency improvement. 
  • Features:
  1. Enhanced Mode: Unique normOFF concept solution and the best fit for longest lifetime 
  2. Ultra fast switching 
  3. No reverse recovery charge 
  4. Capable of reverse conduction 
  5. Superior commutation ruggedness

Benefits:
OPEX and CAPEX reduction, power density improvement and system cost reduction