Infineon Technologies Taiwan Co., Ltd.
台灣英飛凌科技股份有限公司
CoolGaN™ e-mode HEMT ( Booth No. :S0914 )
Winning Reason
- This product is an enhanced transistor that has a unique “Normal OFF” property which allows for a longer product life-span.
- This product can produce higher system efficiency, greatly increase power density and higher operating frequency.
- This product benefits from GaN technology, including high reliability and longer life-span. Also, since the power density has been greatly increased, the system costs have also been largely reduced.
Product Feature
Infineon CoolGaN™ e-mode HEMT reaches 140 W/in3 for 3kW LLC with >98% efficiency, significantly improving power density to almost 3 fold enabling more compact design and efficiency improvement.
- Enhanced Mode: Unique normOFF concept solution and the best fit for longest lifetime
- Ultra fast switching
- No reverse recovery charge
- Capable of reverse conduction
- Superior commutation ruggedness
Benefits:
OPEX and CAPEX reduction, power density improvement and system cost reduction